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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD826 DESCRIPTION With TO-126 package Low collector saturation voltage High DC current gain Large current capacity APPLICATIONS For 3V, 6V strobe applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 60 Collector-base voltage Open emitter Collector-emitter voltage Open base 20 6 Emitter-base voltage Open collector Collector current Collector current-peak t=100ms Ta=25ae 5 8 1.0 UNIT V V V A A PC Collector power dissipation TC=25ae 10 150 -55~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=3A; IB=60mA(pulse) IC=3A; IB=60mA(pulse) VCB=50V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=3A ; VCE=2V(pulse) IC=50mA ; VCE=10V f=1MHz ; VCB=10V 120 95 120 45 MIN TYP. 2SD826 SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB MAX 0.5 1.5 1.0 1.0 560 UNIT V V |I |I A A MHz pF Switching times ton tstg tf hFE-1 Classifications E 120-200 F 160-320 TOR NDU ICO E SEM ANG INCH Turn-on time Storage time 30 IC=2A ;IB1=-IB2=0.2A VCC=10V; RL=5| 300 40 Fall time ns ns ns G 280-560 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD826 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 |
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